PD57018 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available on our website
SOT-23
PD57018 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Package / Case
PowerSO-10 Exposed Bottom Pad
Number of Pins
10
Packaging
Tube
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Operating Temperature
165°C
Min Operating Temperature
-65°C
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Max Power Dissipation
31.7W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
2.5A
Frequency
945MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
PD57018
Pin Count
2
JESD-30 Code
R-PDSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
31.7W
Case Connection
SOURCE
Current - Test
100mA
Transistor Application
AMPLIFIER
Drain to Source Voltage (Vdss)
65V
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Continuous Drain Current (ID)
2.5A
Gate to Source Voltage (Vgs)
20V
Gain
16.5dB
Max Output Power
18W
Drain to Source Breakdown Voltage
65V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
28V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
50
$21.67500
$1083.75
PD57018 Product Details
PD57018 Description
PD57018 MOSFET is an N-channel MOS field-effect RF power transistor designed to be used in signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes PD57018 N-channel MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics PD57018 has the excellent thermal stability.
PD57018 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures