BD239A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD239A-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
30W
Base Part Number
BD239
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
30W
Power - Max
2W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 1A 4V
Current - Collector Cutoff (Max)
300μA
Vce Saturation (Max) @ Ib, Ic
700mV @ 200mA, 1A
Collector Emitter Breakdown Voltage
60V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BD239A-S Product Details
BD239A-S Overview
In this device, the DC current gain is 15 @ 1A 4V, which is the ratio between the base current and the collector current.When VCE saturation is 700mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
BD239A-S Features
the DC current gain for this device is 15 @ 1A 4V the vce saturation(Max) is 700mV @ 200mA, 1A the emitter base voltage is kept at 5V
BD239A-S Applications
There are a lot of Bourns Inc. BD239A-S applications of single BJT transistors.