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BD239A-S

BD239A-S

BD239A-S

Bourns Inc.

BD239A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BD239A-S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 30W
Base Part Number BD239
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 30W
Power - Max 2W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 700mV @ 200mA, 1A
Collector Emitter Breakdown Voltage 60V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
BD239A-S Product Details

BD239A-S Overview


In this device, the DC current gain is 15 @ 1A 4V, which is the ratio between the base current and the collector current.When VCE saturation is 700mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

BD239A-S Features


the DC current gain for this device is 15 @ 1A 4V
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V

BD239A-S Applications


There are a lot of Bourns Inc. BD239A-S applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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