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2N3960UB

2N3960UB

2N3960UB

Microsemi Corporation

Trans GP BJT NPN 12V 4-Pin UB

SOT-23

2N3960UB Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, No Lead
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2007
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Max Power Dissipation400mW
Terminal Position DUAL
Pin Count3
JESD-30 Code R-CDSO-N3
Number of Elements 1
Configuration SINGLE
Power - Max 400mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 1V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 3mA, 30mA
Collector Base Voltage (VCBO) 20V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:3912 items

About 2N3960UB

The 2N3960UB from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans GP BJT NPN 12V 4-Pin UB.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 2N3960UB, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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