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BD245-S

BD245-S

BD245-S

Bourns Inc.

BD245-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BD245-S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
HTS Code 8541.29.00.95
Max Power Dissipation 3W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BD245
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 3W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 4V @ 2.5A, 10A
Collector Emitter Breakdown Voltage 45V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant
BD245-S Product Details

BD245-S Overview


In this device, the DC current gain is 40 @ 1A 4V, which is the ratio between the base current and the collector current.When VCE saturation is 4V @ 2.5A, 10A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.Collector current can be as low as 10A volts at its maximum.

BD245-S Features


the DC current gain for this device is 40 @ 1A 4V
the vce saturation(Max) is 4V @ 2.5A, 10A
the emitter base voltage is kept at 5V

BD245-S Applications


There are a lot of Bourns Inc. BD245-S applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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