BD246A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD246A-S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
JESD-609 Code
e1
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Max Power Dissipation
3W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BD246
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
80W
Case Connection
COLLECTOR
Power - Max
3W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 3A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
4V @ 2.5A, 10A
Collector Emitter Breakdown Voltage
60V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
BD246A-S Product Details
BD246A-S Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 3A 4V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 4V @ 2.5A, 10A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.During maximum operation, collector current can be as low as 10A volts.
BD246A-S Features
the DC current gain for this device is 20 @ 3A 4V the vce saturation(Max) is 4V @ 2.5A, 10A the emitter base voltage is kept at 5V
BD246A-S Applications
There are a lot of Bourns Inc. BD246A-S applications of single BJT transistors.