KSD560R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSD560R Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Reach Compliance Code
compliant
Base Part Number
KSD560
Power - Max
1.5W
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 3A 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 3mA, 3A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
5A
KSD560R Product Details
KSD560R Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 2000 @ 3A 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 3mA, 3A.There is a 100V maximal voltage in the device due to collector-emitter breakdown.
KSD560R Features
the DC current gain for this device is 2000 @ 3A 2V the vce saturation(Max) is 1.5V @ 3mA, 3A
KSD560R Applications
There are a lot of ON Semiconductor KSD560R applications of single BJT transistors.