BD539A-S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 12 @ 3A 4V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 1A, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
BD539A-S Features
the DC current gain for this device is 12 @ 3A 4V
the vce saturation(Max) is 1.5V @ 1A, 5A
the emitter base voltage is kept at 5V
BD539A-S Applications
There are a lot of Bourns Inc. BD539A-S applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface