BD546C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD546C-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Supplier Device Package
SOT-93
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
3.5W
Base Part Number
BD546
Polarity
PNP
Element Configuration
Single
Power - Max
3.5W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 10A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
1V @ 2A, 10A
Collector Emitter Breakdown Voltage
100V
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
15A
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
BD546C-S Product Details
BD546C-S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10 @ 10A 4V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 5V, an efficient operation can be achieved.Supplier package SOT-93 contains the product.Detection of Collector Emitter Breakdown at 100V maximal voltage is present.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
BD546C-S Features
the DC current gain for this device is 10 @ 10A 4V the vce saturation(Max) is 1V @ 2A, 10A the emitter base voltage is kept at 5V the supplier device package of SOT-93
BD546C-S Applications
There are a lot of Bourns Inc. BD546C-S applications of single BJT transistors.