BD745A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD745A-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Supplier Device Package
SOT-93
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
3.5W
Base Part Number
BD745
Polarity
NPN
Power - Max
3.5W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
3V
Max Collector Current
20A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 5A 4V
Current - Collector Cutoff (Max)
1μA
Vce Saturation (Max) @ Ib, Ic
3V @ 5A, 20A
Collector Emitter Breakdown Voltage
60V
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
20A
RoHS Status
ROHS3 Compliant
BD745A-S Product Details
BD745A-S Overview
DC current gain in this device equals 20 @ 5A 4V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 3V @ 5A, 20A means Ic has reached its maximum value(saturated).Product comes in SOT-93 supplier package.Device displays Collector Emitter Breakdown (60V maximal voltage).When collector current reaches its maximum, it can reach 20A volts.
BD745A-S Features
the DC current gain for this device is 20 @ 5A 4V the vce saturation(Max) is 3V @ 5A, 20A the supplier device package of SOT-93
BD745A-S Applications
There are a lot of Bourns Inc. BD745A-S applications of single BJT transistors.