BDT60-S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 1.5A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2.5V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 2.5V @ 6mA, 1.5A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.Product comes in TO-220 supplier package.The device exhibits a collector-emitter breakdown at 60V.Collector current can be as low as 4A volts at its maximum.
BDT60-S Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 1.5A
the emitter base voltage is kept at 5V
the supplier device package of TO-220
BDT60-S Applications
There are a lot of Bourns Inc. BDT60-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
