BDV64-S Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 5A 4V.A collector emitter saturation voltage of 2V allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 20mA, 5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The product comes in the supplier device package of SOT-93.The device has a 60V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 12A volts can be achieved.
BDV64-S Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the supplier device package of SOT-93
BDV64-S Applications
There are a lot of Bourns Inc. BDV64-S applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
