BDV64A-S Overview
This device has a DC current gain of 1000 @ 5A 4V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 20mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.The product comes in the supplier device package of SOT-93.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.Single BJT transistor is possible to have a collector current as low as 12A volts at Single BJT transistors maximum.
BDV64A-S Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the supplier device package of SOT-93
BDV64A-S Applications
There are a lot of Bourns Inc. BDV64A-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
