2N4403RL Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.When VCE saturation is 750mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).200MHz is present in the transition frequency.Device displays Collector Emitter Breakdown (40V maximal voltage).
2N4403RL Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 750mV @ 50mA, 500mA
a transition frequency of 200MHz
2N4403RL Applications
There are a lot of Rochester Electronics, LLC 2N4403RL applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter