BDV65-S Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 5A 4V.A collector emitter saturation voltage of 2V allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 5V to gain high efficiency.There is no device package available from the supplier for this product.The device exhibits a collector-emitter breakdown at 60V.A maximum collector current of 12A volts can be achieved.

BDV65-S Features

the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the supplier device package of SOT-93

BDV65-S Applications

There are a lot of Bourns Inc. BDV65-S applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface