KSB564ACGTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 1V DC current gain.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.With the emitter base voltage set at -5V, an efficient operation can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.Product comes in the supplier's device package TO-92-3.A 25V maximal voltage - Collector Emitter Breakdown is present in the device.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
KSB564ACGTA Features
the DC current gain for this device is 200 @ 100mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
the supplier device package of TO-92-3
KSB564ACGTA Applications
There are a lot of ON Semiconductor KSB564ACGTA applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
