BDV65B-S Overview
In this device, the DC current gain is 1000 @ 5A 4V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 20mA, 5A.The emitter base voltage can be kept at 5V for high efficiency.Product package SOT-93 comes from the supplier.This device displays a 100V maximum voltage - Collector Emitter Breakdown.Maximum collector currents can be below 12A volts.
BDV65B-S Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the supplier device package of SOT-93
BDV65B-S Applications
There are a lot of Bourns Inc. BDV65B-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
