BDW63D-S Overview
In this device, the DC current gain is 750 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 2.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 4V @ 60mA, 6A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Collector current can be as low as 6A volts at its maximum.
BDW63D-S Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 60mA, 6A
the emitter base voltage is kept at 5V
BDW63D-S Applications
There are a lot of Bourns Inc. BDW63D-S applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
