BDW84A-S Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 6A 3V.A collector emitter saturation voltage of 2.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 4V @ 150mA, 15A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Single BJT transistor comes in a supplier device package of SOT-93.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.

BDW84A-S Features

the DC current gain for this device is 750 @ 6A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
the supplier device package of SOT-93

BDW84A-S Applications

There are a lot of Bourns Inc. BDW84A-S applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver