2N3737 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N3737 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AB, TO-46-3 Metal Can
Number of Pins
3
Supplier Device Package
TO-46-3
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Power - Max
500mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
900mV
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 1A 1.5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
900mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
40V
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
1.5A
Collector Base Voltage (VCBO)
75V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$14.20860
$1420.86
2N3737 Product Details
2N3737 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 1A 1.5V.A VCE saturation (Max) of 900mV @ 100mA, 1A means Ic has reached its maximum value(saturated).Product comes in the supplier's device package TO-46-3.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.A maximum collector current of 1.5A volts can be achieved.
2N3737 Features
the DC current gain for this device is 20 @ 1A 1.5V the vce saturation(Max) is 900mV @ 100mA, 1A the supplier device package of TO-46-3
2N3737 Applications
There are a lot of Microsemi Corporation 2N3737 applications of single BJT transistors.