BDW84B-S Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 6A 3V.A collector emitter saturation voltage of 2.5V ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 4V @ 150mA, 15A.The emitter base voltage can be kept at 5V for high efficiency.Supplier device package SOT-93 comes with the product.The device exhibits a collector-emitter breakdown at 80V.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
BDW84B-S Features
the DC current gain for this device is 750 @ 6A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
the supplier device package of SOT-93
BDW84B-S Applications
There are a lot of Bourns Inc. BDW84B-S applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
