BDX33B-S Overview
This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 6mA, 3A means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.A maximum collector current of 10A volts is possible.
BDX33B-S Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
BDX33B-S Applications
There are a lot of Bourns Inc. BDX33B-S applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver