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BU406-S

BU406-S

BU406-S

Bourns Inc.

BU406-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BU406-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation60W
Frequency 6MHz
Base Part Number BU406
Number of Elements 1
Configuration Single
Power Dissipation60W
Gain Bandwidth Product6MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 200V
Max Collector Current 7A
DC Current Gain (hFE) (Min) @ Ic, Vce 12 @ 4A 10V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 5A
Collector Emitter Breakdown Voltage140V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 6V
hFE Min 12
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:4494 items

BU406-S Product Details

BU406-S Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 12 @ 4A 10V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 500mA, 5A.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Maximum collector currents can be below 7A volts.

BU406-S Features


the DC current gain for this device is 12 @ 4A 10V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 6V

BU406-S Applications


There are a lot of Bourns Inc. BU406-S applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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