BU406-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BU406-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
60W
Frequency
6MHz
Base Part Number
BU406
Number of Elements
1
Configuration
Single
Power Dissipation
60W
Gain Bandwidth Product
6MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
200V
Max Collector Current
7A
DC Current Gain (hFE) (Min) @ Ic, Vce
12 @ 4A 10V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1V @ 500mA, 5A
Collector Emitter Breakdown Voltage
140V
Collector Base Voltage (VCBO)
400V
Emitter Base Voltage (VEBO)
6V
hFE Min
12
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BU406-S Product Details
BU406-S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 12 @ 4A 10V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 500mA, 5A.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Maximum collector currents can be below 7A volts.
BU406-S Features
the DC current gain for this device is 12 @ 4A 10V the vce saturation(Max) is 1V @ 500mA, 5A the emitter base voltage is kept at 6V
BU406-S Applications
There are a lot of Bourns Inc. BU406-S applications of single BJT transistors.