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BUL770-S

  • BUL770-S
  • BUL770-S

BUL770-S

BUL770-S

Bourns Inc.

BUL770-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BUL770-S Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Packaging Bulk
Published 1993
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 50W
Terminal Position SINGLE
Base Part Number BUL770
Pin Count 3
Number of Elements 1
Configuration SINGLE
Power Dissipation 50W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 7 @ 800mA 1V
Current - Collector Cutoff (Max) 10μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 250mV @ 160mA, 800mA
Collector Emitter Breakdown Voltage 400V
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 9V
Radiation Hardening No
RoHS Status ROHS3 Compliant
BUL770-S Product Details

BUL770-S Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 7 @ 800mA 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 9V for high efficiency.Single BJT transistor is possible to have a collector current as low as 2.5A volts at Single BJT transistors maximum.

BUL770-S Features


the DC current gain for this device is 7 @ 800mA 1V
the vce saturation(Max) is 250mV @ 160mA, 800mA
the emitter base voltage is kept at 9V

BUL770-S Applications


There are a lot of Bourns Inc. BUL770-S applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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