BCX6916E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BCX6916E6327HTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-243AA
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BCX69
Power - Max
3W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
20V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
100MHz
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.269181
$0.269181
10
$0.253945
$2.53945
100
$0.239570
$23.957
500
$0.226010
$113.005
1000
$0.213217
$213.217
BCX6916E6327HTSA1 Product Details
BCX6916E6327HTSA1 Overview
This device has a DC current gain of 100 @ 500mA 1V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The device has a 20V maximal voltage - Collector Emitter Breakdown.
BCX6916E6327HTSA1 Features
the DC current gain for this device is 100 @ 500mA 1V the vce saturation(Max) is 500mV @ 100mA, 1A
BCX6916E6327HTSA1 Applications
There are a lot of Infineon Technologies BCX6916E6327HTSA1 applications of single BJT transistors.