BUX84-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BUX84-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
40W
Frequency
12MHz
Base Part Number
BUX84
Number of Elements
1
Configuration
Single
Power Dissipation
40W
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
35 @ 100mA 5V
Current - Collector Cutoff (Max)
200μA
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 1A
Collector Emitter Breakdown Voltage
400V
Current - Collector (Ic) (Max)
2A
Collector Base Voltage (VCBO)
800V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BUX84-S Product Details
BUX84-S Overview
In this device, the DC current gain is 35 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 200mA, 1A.When collector current reaches its maximum, it can reach 2A volts.
BUX84-S Features
the DC current gain for this device is 35 @ 100mA 5V the vce saturation(Max) is 1V @ 200mA, 1A
BUX84-S Applications
There are a lot of Bourns Inc. BUX84-S applications of single BJT transistors.