DCP56-13 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.A collector emitter saturation voltage of 500mV allows maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).A constant collector voltage of 1A is necessary for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.In this part, there is a transition frequency of 200MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.A maximum collector current of 1A volts is possible.

DCP56-13 Features

the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

DCP56-13 Applications

There are a lot of Diodes Incorporated DCP56-13 applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter