TIP2955-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIP2955-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Supplier Device Package
SOT-93
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
3.5W
Number of Elements
1
Polarity
PNP
Power Dissipation
90W
Power - Max
3.5W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
3V @ 3.3A, 10A
Collector Emitter Breakdown Voltage
60V
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
15A
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
7V
RoHS Status
ROHS3 Compliant
TIP2955-S Product Details
TIP2955-S Overview
In this device, the DC current gain is 20 @ 4A 4V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 3.3A, 10A.Emitter base voltages of 7V can achieve high levels of efficiency.SOT-93 is the supplier device package for this product.This device displays a 60V maximum voltage - Collector Emitter Breakdown.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
TIP2955-S Features
the DC current gain for this device is 20 @ 4A 4V the vce saturation(Max) is 3V @ 3.3A, 10A the emitter base voltage is kept at 7V the supplier device package of SOT-93
TIP2955-S Applications
There are a lot of Bourns Inc. TIP2955-S applications of single BJT transistors.