MJD42CT4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJD42CT4 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2006
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Max Power Dissipation
1.75W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-6A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
MJD42
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
20W
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
1.5V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A 4V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 600mA, 6A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
1.5V
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
30
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
MJD42CT4 Product Details
MJD42CT4 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 3A 4V.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 600mA, 6A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -6A current rating.In this part, there is a transition frequency of 3MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 6A volts can be achieved.
MJD42CT4 Features
the DC current gain for this device is 15 @ 3A 4V a collector emitter saturation voltage of 1.5V the vce saturation(Max) is 1.5V @ 600mA, 6A the emitter base voltage is kept at 5V the current rating of this device is -6A a transition frequency of 3MHz
MJD42CT4 Applications
There are a lot of ON Semiconductor MJD42CT4 applications of single BJT transistors.