TIP29C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIP29C-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
2W
Base Part Number
TIP29
Configuration
Single
Power - Max
2W
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
700mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 1A 4V
Current - Collector Cutoff (Max)
300μA
Vce Saturation (Max) @ Ib, Ic
700mV @ 125mA, 1A
Collector Emitter Breakdown Voltage
100V
Collector Base Voltage (VCBO)
140V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
TIP29C-S Product Details
TIP29C-S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 1A 4V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Collector current can be as low as 1A volts at its maximum.
TIP29C-S Features
the DC current gain for this device is 15 @ 1A 4V the vce saturation(Max) is 700mV @ 125mA, 1A
TIP29C-S Applications
There are a lot of Bourns Inc. TIP29C-S applications of single BJT transistors.