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TIP29C-S

TIP29C-S

TIP29C-S

Bourns Inc.

TIP29C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIP29C-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation2W
Base Part Number TIP29
Configuration Single
Power - Max 2W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 700mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 700mV @ 125mA, 1A
Collector Emitter Breakdown Voltage100V
Collector Base Voltage (VCBO) 140V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:2120 items

TIP29C-S Product Details

TIP29C-S Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 1A 4V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Collector current can be as low as 1A volts at its maximum.

TIP29C-S Features


the DC current gain for this device is 15 @ 1A 4V
the vce saturation(Max) is 700mV @ 125mA, 1A

TIP29C-S Applications


There are a lot of Bourns Inc. TIP29C-S applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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