TIP30C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIP30C-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
2W
Base Part Number
TIP30
Number of Elements
1
Configuration
Single
Power Dissipation
30W
Power - Max
2W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 1A 4V
Current - Collector Cutoff (Max)
300μA
Vce Saturation (Max) @ Ib, Ic
700mV @ 125mA, 1A
Collector Emitter Breakdown Voltage
100V
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
TIP30C-S Product Details
TIP30C-S Overview
This device has a DC current gain of 15 @ 1A 4V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 125mA, 1A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.The maximum collector current is 1A volts.
TIP30C-S Features
the DC current gain for this device is 15 @ 1A 4V the vce saturation(Max) is 700mV @ 125mA, 1A the emitter base voltage is kept at 5V
TIP30C-S Applications
There are a lot of Bourns Inc. TIP30C-S applications of single BJT transistors.