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TIP32A-S

TIP32A-S

TIP32A-S

Bourns Inc.

TIP32A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIP32A-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation2W
Base Part Number TIP32
Number of Elements 1
Configuration Single
Power Dissipation40W
Power - Max 2W
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage60V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:4892 items

TIP32A-S Product Details

TIP32A-S Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 1A 4V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 375mA, 3A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.In extreme cases, the collector current can be as low as 3A volts.

TIP32A-S Features


the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V

TIP32A-S Applications


There are a lot of Bourns Inc. TIP32A-S applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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