Welcome to Hotenda.com Online Store!

logo
userjoin
Home

TIP33C-S

TIP33C-S

TIP33C-S

Bourns Inc.

TIP33C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIP33C-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Number of Pins 3
Supplier Device Package SOT-93
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -65°C
Max Power Dissipation3.5W
Base Part Number TIP33
Polarity NPN
Power - Max 3.5W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 3A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 4V @ 2.5A, 10A
Collector Emitter Breakdown Voltage100V
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 10A
Collector Base Voltage (VCBO) 140V
RoHS StatusROHS3 Compliant
In-Stock:3670 items

TIP33C-S Product Details

TIP33C-S Overview


DC current gain in this device equals 20 @ 3A 4V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 2.5A, 10A.Single BJT transistor comes in a supplier device package of SOT-93.This device displays a 100V maximum voltage - Collector Emitter Breakdown.The maximum collector current is 10A volts.

TIP33C-S Features


the DC current gain for this device is 20 @ 3A 4V
the vce saturation(Max) is 4V @ 2.5A, 10A
the supplier device package of SOT-93

TIP33C-S Applications


There are a lot of Bourns Inc. TIP33C-S applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

Get Subscriber

Enter Your Email Address, Get the Latest News