MJE803G Overview
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.With the emitter base voltage set at 5V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.As a result, the part has a transition frequency of 1MHz.A maximum collector current of 4A volts can be achieved.
MJE803G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 1MHz
MJE803G Applications
There are a lot of ON Semiconductor MJE803G applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
