TIP35A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIP35A-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Supplier Device Package
SOT-93
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
3.5W
Base Part Number
TIP35
Number of Elements
1
Polarity
NPN
Power Dissipation
125W
Power - Max
3.5W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
25A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 15A 4V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
4V @ 5A, 25A
Collector Emitter Breakdown Voltage
60V
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
25A
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
TIP35A-S Product Details
TIP35A-S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 15A 4V DC current gain.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor comes in a supplier device package of SOT-93.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.Maximum collector currents can be below 25A volts.
TIP35A-S Features
the DC current gain for this device is 10 @ 15A 4V the vce saturation(Max) is 4V @ 5A, 25A the emitter base voltage is kept at 5V the supplier device package of SOT-93
TIP35A-S Applications
There are a lot of Bourns Inc. TIP35A-S applications of single BJT transistors.