MMBT6427 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 14000 @ 500mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 500μA, 500mA.An emitter's base voltage can be kept at 12V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor can take a breakdown input voltage of 40V volts.Product comes in the supplier's device package SOT-23-3 (TO-236).Device displays Collector Emitter Breakdown (40V maximal voltage).Single BJT transistor is possible to have a collector current as low as 1.2A volts at Single BJT transistors maximum.
MMBT6427 Features
the DC current gain for this device is 14000 @ 500mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 1.2A
the supplier device package of SOT-23-3 (TO-236)
MMBT6427 Applications
There are a lot of ON Semiconductor MMBT6427 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
