MMBT6427 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBT6427 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
39 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 23 hours ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Supplier Device Package
SOT-23-3 (TO-236)
Weight
30mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
40V
Max Power Dissipation
350mW
Current Rating
1.2A
Base Part Number
MMBT6427
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
350mW
Power - Max
350mW
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
1.2A
DC Current Gain (hFE) (Min) @ Ic, Vce
14000 @ 500mA 5V
Current - Collector Cutoff (Max)
1μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 500μA, 500mA
Collector Emitter Breakdown Voltage
40V
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
1.2A
Collector Emitter Saturation Voltage
1.2V
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
12V
hFE Min
20000
Height
930μm
Length
2.92mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
MMBT6427 Product Details
MMBT6427 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 14000 @ 500mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 500μA, 500mA.An emitter's base voltage can be kept at 12V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor can take a breakdown input voltage of 40V volts.Product comes in the supplier's device package SOT-23-3 (TO-236).Device displays Collector Emitter Breakdown (40V maximal voltage).Single BJT transistor is possible to have a collector current as low as 1.2A volts at Single BJT transistors maximum.
MMBT6427 Features
the DC current gain for this device is 14000 @ 500mA 5V a collector emitter saturation voltage of 1.2V the vce saturation(Max) is 1.5V @ 500μA, 500mA the emitter base voltage is kept at 12V the current rating of this device is 1.2A the supplier device package of SOT-23-3 (TO-236)
MMBT6427 Applications
There are a lot of ON Semiconductor MMBT6427 applications of single BJT transistors.