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MMBT6427

MMBT6427

MMBT6427

ON Semiconductor

MMBT6427 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT6427 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 39 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 23 hours ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3 (TO-236)
Weight 30mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 40V
Max Power Dissipation 350mW
Current Rating 1.2A
Base Part Number MMBT6427
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 350mW
Power - Max 350mW
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 1.2A
DC Current Gain (hFE) (Min) @ Ic, Vce 14000 @ 500mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500μA, 500mA
Collector Emitter Breakdown Voltage 40V
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 1.2A
Collector Emitter Saturation Voltage 1.2V
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 12V
hFE Min 20000
Height 930μm
Length 2.92mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
MMBT6427 Product Details

MMBT6427 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 14000 @ 500mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 500μA, 500mA.An emitter's base voltage can be kept at 12V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor can take a breakdown input voltage of 40V volts.Product comes in the supplier's device package SOT-23-3 (TO-236).Device displays Collector Emitter Breakdown (40V maximal voltage).Single BJT transistor is possible to have a collector current as low as 1.2A volts at Single BJT transistors maximum.

MMBT6427 Features


the DC current gain for this device is 14000 @ 500mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 1.2A
the supplier device package of SOT-23-3 (TO-236)

MMBT6427 Applications


There are a lot of ON Semiconductor MMBT6427 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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