TIP42C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIP42C-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
2W
Base Part Number
TIP42
Number of Elements
1
Configuration
Single
Power Dissipation
65W
Power - Max
2W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 600mA, 6A
Collector Emitter Breakdown Voltage
100V
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.761998
$3.761998
10
$3.549054
$35.49054
100
$3.348165
$334.8165
500
$3.158646
$1579.323
1000
$2.979854
$2979.854
TIP42C-S Product Details
TIP42C-S Overview
This device has a DC current gain of 15 @ 3A 4V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 600mA, 6A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
TIP42C-S Features
the DC current gain for this device is 15 @ 3A 4V the vce saturation(Max) is 1.5V @ 600mA, 6A the emitter base voltage is kept at 5V
TIP42C-S Applications
There are a lot of Bourns Inc. TIP42C-S applications of single BJT transistors.