DSA9001R0L Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 210 @ 2mA 10V.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A constant collector voltage of -100mA is necessary for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.The breakdown input voltage is 50V volts.During maximum operation, collector current can be as low as 100mA volts.

DSA9001R0L Features

the DC current gain for this device is 210 @ 2mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at -7V
a transition frequency of 150MHz

DSA9001R0L Applications

There are a lot of Panasonic Electronic Components DSA9001R0L applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting