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ATF-531P8-BLK

ATF-531P8-BLK

ATF-531P8-BLK

Broadcom Limited

AVAGO TECHNOLOGIES ATF-531P8-BLK RF FET Transistor, High Linearity, 7 V, 300 mA, 1 W, 50 MHz, 6 GHz, LPCC

SOT-23

ATF-531P8-BLK Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Package / Case 8-WFDFN Exposed Pad
Number of Pins 8
Packaging Bulk
Published 2008
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated 7V
Subcategory FET RF Small Signal
Max Power Dissipation 1W
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Current Rating 300mA
Frequency 2GHz
Base Part Number ATF-531P8
Number of Elements 1
Configuration SINGLE
Nominal Supply Current 135mA
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Case Connection SOURCE
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 4V
Polarity/Channel Type N-CHANNEL
Transistor Type E-pHEMT
Continuous Drain Current (ID) 300mA
JEDEC-95 Code MO-229
Gate to Source Voltage (Vgs) 1V
Gain 20dB
Drain Current-Max (Abs) (ID) 0.3A
Dual Supply Voltage 4V
DS Breakdown Voltage-Min 7V
Power - Output 24.5dBm
FET Technology HIGH ELECTRON MOBILITY
Noise Figure 0.6dB
Nominal Vgs 300 mV
Height 800μm
Length 2.1mm
Width 2.1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

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