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NE3515S02-T1D-A

  • NE3515S02-T1D-A
  • NE3515S02-T1D-A

NE3515S02-T1D-A

NE3515S02-T1D-A

CEL

RF JFET Transistors Super Low Noise Pseudomorphic

SOT-23

NE3515S02-T1D-A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case 4-SMD, Flat Leads
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 125°C
Max Power Dissipation 165mW
Current Rating 88mA
Frequency 12GHz
Current - Test 10mA
Drain to Source Voltage (Vdss) 4V
Transistor Type HFET
Continuous Drain Current (ID) 88mA
Gate to Source Voltage (Vgs) -3V
Gain 12.5dB
Power - Output 14dBm
Noise Figure 0.3dB
Voltage - Test 2V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.67000 $0.67
500 $0.6633 $331.65
1000 $0.6566 $656.6
1500 $0.6499 $974.85
2000 $0.6432 $1286.4
2500 $0.6365 $1591.25

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