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MRFX1K80HR5

MRFX1K80HR5

MRFX1K80HR5

NXP USA Inc.

MRFX1K80HR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

MRFX1K80HR5 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case SOT-979A
Packaging Cut Tape (CT)
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Voltage - Rated 182V
Current Rating (Amps) 10μA
Peak Reflow Temperature (Cel) 260
Frequency 1.8MHz~470MHz
[email protected] Reflow Temperature-Max (s) 40
Current - Test 200mA
Transistor Type LDMOS (Dual)
Gain 24dB
Power - Output 1800W
Voltage - Test 65V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
50 $225.90100 $11295.05
MRFX1K80HR5 Product Details

MRFX1K80HR5 Description


For use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications, this highly robust gadget was created. Due to its unique input and output configuration, it can operate at frequencies between 1.8 and 400 MHz.



MRFX1K80HR5 Features


  • Unmatched input and output allow for the use of a wide frequency range.

  • Push-pull or single-ended usage of the device is available.

  • qualified up to 65 VDD operations in total

  • characterized by a wider power range of 30 to 65 V

  • Higher dependability thanks to a high breakdown voltage

  • With the proper biasing, suitable for linear applications



MRFX1K80HR5 Applications


  • laser production

  • plasma production

  • Accelerators for particles

  • RF ablation, MRI, and skin care

  • Systems for industrial heating, welding, and drying


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