The CEL Transistors - FETs, MOSFETs - RF NE5550779A-A is a high-performance FET designed for RF applications. It features a 30V drain-source voltage rating and a 900MHz frequency rating, making it ideal for use in high-frequency applications. The 79A drain current rating ensures that it can handle high power levels, while the low gate-source capacitance ensures minimal signal distortion. This FET is also designed for low noise operation, making it suitable for use in sensitive applications. With its high performance and reliable operation, the CEL Transistors - FETs, MOSFETs - RF NE5550779A-A is an excellent choice for RF applications.