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2N5086

2N5086

2N5086

Central Semiconductor

1 Elements 3 Terminations TO-92-3

SOT-23

2N5086 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case TO-92-3
Surface MountNO
Published 2012
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature150°C
Min Operating Temperature -65°C
Additional FeatureLOW NOISE
HTS Code8541.21.00.95
Subcategory Other Transistors
Terminal Position BOTTOM
Terminal FormTHROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code O-PBCY-T3
Qualification StatusNot Qualified
Number of Elements 1
Polarity PNP
Power Dissipation-Max 625mW
Element ConfigurationSingle
Transistor Application AMPLIFIER
Gain Bandwidth Product40MHz
Collector Emitter Voltage (VCEO) 50V
Transition Frequency 40MHz
Collector Emitter Saturation Voltage300mV
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 3V
Collector Current-Max (IC) 0.05A
DC Current Gain-Min (hFE) 150
RoHS StatusNon-RoHS Compliant
In-Stock:3585 items

Pricing & Ordering

QuantityUnit PriceExt. Price

2N5086 Product Details

2N5086 Overview


This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.With the emitter base voltage set at 3V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.

2N5086 Features


a collector emitter saturation voltage of 300mV
the emitter base voltage is kept at 3V
a transition frequency of 40MHz


2N5086 Applications


There are a lot of Central Semiconductor
2N5086 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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