KSB798YTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSB798YTF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSSO-F3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
2W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
135 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
25V
Current - Collector (Ic) (Max)
1A
Transition Frequency
110MHz
Frequency - Transition
110MHz
RoHS Status
ROHS3 Compliant
KSB798YTF Product Details
KSB798YTF Overview
In this device, the DC current gain is 135 @ 100mA 1V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 100mA, 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 110MHz.The device has a 25V maximal voltage - Collector Emitter Breakdown.
KSB798YTF Features
the DC current gain for this device is 135 @ 100mA 1V the vce saturation(Max) is 400mV @ 100mA, 1A a transition frequency of 110MHz
KSB798YTF Applications
There are a lot of Rochester Electronics, LLC KSB798YTF applications of single BJT transistors.