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KSB798YTF

KSB798YTF

KSB798YTF

Rochester Electronics, LLC

KSB798YTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

KSB798YTF Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-F3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 2W
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 135 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 1A
Transition Frequency 110MHz
Frequency - Transition 110MHz
RoHS Status ROHS3 Compliant
KSB798YTF Product Details

KSB798YTF Overview


In this device, the DC current gain is 135 @ 100mA 1V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 100mA, 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 110MHz.The device has a 25V maximal voltage - Collector Emitter Breakdown.

KSB798YTF Features


the DC current gain for this device is 135 @ 100mA 1V
the vce saturation(Max) is 400mV @ 100mA, 1A
a transition frequency of 110MHz

KSB798YTF Applications


There are a lot of Rochester Electronics, LLC KSB798YTF applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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