PNP -65°C ~ 150°C (TJ) 10µA (ICBO) 1 Elements SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
SOT-23
CBCP69 TR Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Surface Mount
YES
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
SOT-223
Number of Terminals
4
Transistor Element Material
SILICON
Operating Temperature
-65°C ~ 150°C (TJ)
Series
--
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
icon-pbfree yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
MATTE TIN (315)
HTS Code
8541.29.00.75
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
10
JESD-30 Code
R-PDSO-G4
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 500mA, 1V
Current - Collector Cutoff (Max)
10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
20V
Current - Collector (Ic) (Max)
1A
Transition Frequency
65MHz
Frequency - Transition
65MHz
Power Dissipation-Max (Abs)
2W
Collector Current-Max (IC)
1A
DC Current Gain-Min (hFE)
85
Collector-Emitter Voltage-Max
20V
VCEsat-Max
0.5 V
RoHS Status
RoHS Compliant
CBCP69 TR Product Details
CBCP69 TR Overview
This device has a DC current gain of 85 @ 500mA, 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 65MHz.Single BJT transistor comes in a supplier device package of SOT-223.Maximum collector-emitter voltage can be set to 20V.Detection of Collector Emitter Breakdown at 20V maximal voltage is present.
CBCP69 TR Features
the DC current gain for this device is 85 @ 500mA, 1V the vce saturation(Max) is 500mV @ 100mA, 1A a transition frequency of 65MHz the supplier device package of SOT-223
CBCP69 TR Applications
There are a lot of Central Semiconductor CBCP69 TR applications of single BJT transistors.