JAN2N3584 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JAN2N3584 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
36 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-213AA, TO-66-2
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2002
Series
Military, MIL-PRF-19500/384
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
2.5W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
2.5W
Case Connection
COLLECTOR
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
250V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 10V
Current - Collector Cutoff (Max)
5mA
Vce Saturation (Max) @ Ib, Ic
750mV @ 125mA, 1A
Collector Base Voltage (VCBO)
375V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JAN2N3584 Product Details
JAN2N3584 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 1A 10V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 125mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Collector current can be as low as 2A volts at its maximum.
JAN2N3584 Features
the DC current gain for this device is 25 @ 1A 10V the vce saturation(Max) is 750mV @ 125mA, 1A the emitter base voltage is kept at 6V
JAN2N3584 Applications
There are a lot of Microsemi Corporation JAN2N3584 applications of single BJT transistors.