2N3019 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N3019 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Surface Mount
NO
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory
Other Transistors
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Configuration
Single
Power - Max
800mW
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
1A
Transition Frequency
100MHz
Frequency - Transition
100MHz
Power Dissipation-Max (Abs)
5W
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.027000
$2.027
10
$1.912264
$19.12264
100
$1.804023
$180.4023
500
$1.701908
$850.954
1000
$1.605574
$1605.574
2N3019 PBFREE Product Details
2N3019 PBFREE Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).As you can see, the part has a transition frequency of 100MHz.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N3019 PBFREE Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 500mV @ 50mA, 500mA a transition frequency of 100MHz
2N3019 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N3019 PBFREE applications of single BJT transistors.