KSB907TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 3A 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 4mA, 2A.This device displays a 40V maximum voltage - Collector Emitter Breakdown.
KSB907TU Features
the DC current gain for this device is 1000 @ 3A 2V
the vce saturation(Max) is 1.5V @ 4mA, 2A
KSB907TU Applications
There are a lot of Rochester Electronics, LLC KSB907TU applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver