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KSB907TU

  • KSB907TU
  • KSB907TU

KSB907TU

KSB907TU

Rochester Electronics, LLC

KSB907TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

KSB907TU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration DARLINGTON WITH BUILT-IN DIODE
Power - Max 15W
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A 2V
Current - Collector Cutoff (Max) 20μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 4mA, 2A
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 3A
RoHS Status ROHS3 Compliant
KSB907TU Product Details

KSB907TU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 3A 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 4mA, 2A.This device displays a 40V maximum voltage - Collector Emitter Breakdown.

KSB907TU Features


the DC current gain for this device is 1000 @ 3A 2V
the vce saturation(Max) is 1.5V @ 4mA, 2A

KSB907TU Applications


There are a lot of Rochester Electronics, LLC KSB907TU applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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