2N3415 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N3415 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
1.5W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 2mA 4.5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 3mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
25V
Current - Collector (Ic) (Max)
500mA
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.045000
$1.045
10
$0.985849
$9.85849
100
$0.930046
$93.0046
500
$0.877402
$438.701
1000
$0.827738
$827.738
2N3415 PBFREE Product Details
2N3415 PBFREE Overview
In this device, the DC current gain is 180 @ 2mA 4.5V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 3mA, 50mA.A 25V maximal voltage - Collector Emitter Breakdown is present in the device.
2N3415 PBFREE Features
the DC current gain for this device is 180 @ 2mA 4.5V the vce saturation(Max) is 300mV @ 3mA, 50mA
2N3415 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N3415 PBFREE applications of single BJT transistors.