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2N1131 PBFREE

  • 2N1131 PBFREE
  • 2N1131 PBFREE

2N1131 PBFREE

2N1131 PBFREE

Central Semiconductor Corp

2N1131 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N1131 PBFREE Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Operating Temperature -65°C~200°C TJ
Packaging Bulk
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 2W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 150mA 10V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 600mA
Frequency - Transition 50MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.96000 $3.96
500 $3.9204 $1960.2
1000 $3.8808 $3880.8
1500 $3.8412 $5761.8
2000 $3.8016 $7603.2
2500 $3.762 $9405
2N1131 PBFREE Product Details

2N1131 PBFREE Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 150mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 15mA, 150mA.This device displays a 50V maximum voltage - Collector Emitter Breakdown.

2N1131 PBFREE Features


the DC current gain for this device is 20 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA

2N1131 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N1131 PBFREE applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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