2N6488 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N6488 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
3
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Position
SINGLE
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
75W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 4V
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3.5V @ 5A, 15A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
15A
Transition Frequency
5MHz
Frequency - Transition
5MHz
RoHS Status
ROHS3 Compliant
2N6488 PBFREE Product Details
2N6488 PBFREE Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 1A 4V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3.5V @ 5A, 15A.Parts of this part have transition frequencies of 5MHz.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N6488 PBFREE Features
the DC current gain for this device is 25 @ 1A 4V the vce saturation(Max) is 3.5V @ 5A, 15A a transition frequency of 5MHz
2N6488 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N6488 PBFREE applications of single BJT transistors.